/ o1^ , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 STP6NA80 STP6NA80fi n- channel enhancement mode fast power mos transistor type STP6NA80 STP6NA80fi vdss 800v 800v rds(on) < 1.9ii < 1.9 n id 5.7 a 3.4 a typical ros(on) ^ 1.68 ti 30v gate to source voltage rating 100% avalanche tested repetitive avalanche data at 100c low intrinsic capacitances gate charge minimized reduced threshold voltage spread description this series of power mosfets represents the most advanced high voltage technology. the optimized cell layout coupled with a new proprietary edge termination concur to give the device low ros(on) and gate charge, unequalled ruggedness and superior switching performance. applications . high current, high speed switching . switch mode power supplies (smps) . dc-ac converters for welding equipment and uninterruptible power supplies and motor drive absolute maximum ratings to-220 isowatt220 internal schematic diagram 6(1) 5(3) symbol vds vdgr vgs id id !dm(?) plot viso tstg tj parameter drain-source voltage (vcs = 0) drain-gate voltage (rgs = 20 ki2) gate-source voltage drain current (continuous) at tc = 25 c drain current (continuous) at tc = 100 c drain current (pulsed) total dissipation at tc = 25 c derating factor insulation withstand voltage (dc) storage temperature max. operating junction temperature value STP6NA80 STP6NA80fi 800 800 30 5.7 3.6 23 125 1 ? 3.4 2.1 23 45 0.36 2000 -65 to 150 150 unit v v v a a a w w/c v c c (?) pulse width limited by safe operating area nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
STP6NA80/fi thermal data rthj-case rthj-amb rthc-sink t| thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose to-220 1 isowatt220 2.78 62.5 0.5 300 c/w c/w c/w c avalanche characteristics symbol iar eas ear iar parameter avalanche current, repetitive or not-repetitive (pulse width limited by tj max, 5 < 1%) single pulse avalanche energy (starting tj = 25 c, id = iar, vdd = 50 v) repetitive avalanche energy (pulse width limited by tj max, 5 < 1%) avalanche current, repetitive or not-repetitive (tc = 100 c, pulse width limited by tj max, 5 < 1%) max value 5.7 165 6.5 3.6 unit a mj mj a electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss loss igss parameter drain-source breakdown voltage zero gate voltage drain current (vgs = 0) gate-body leakage current (vos = 0) test conditions !d=250|xa vgs=0 vds = max rating vds = max rating x 0.8 tc=125c vgs = 30 v min. 800 typ. max. 25 250 100 unit v ha ha na on (* symbol vos(th) rds(on) id(on) parameter gate threshold voltage static drain-source on resistance on state drain current test conditions vds = vgs !d=250na vgs = 10v |d=3a vds > lo(on) x rds(on)max vgs= 10 v min. 2.25 6 typ. 3 1.68 max. 3.75 1.9 unit v ij a dynamic symbol 9fs (*) ciss coss crss parameter forward transconductance input capacitance output capacitance reverse transfer capacitance test conditions vds > ld(on) * rds(on)max id = 3 a vds^ 25 v f = 1 mhz vgs= 0 min. 4 typ. 6.1 1330 160 40 max. 1750 210 55 unit s pf pf pf
STP6NA80/fi electrical characteristics (continued) switching on symbol td(on) tr (di/dt)on qg qgs qg |
